400-mW single-frequency 660-nm semiconductor laser
Identifieur interne : 015790 ( Main/Repository ); précédent : 015789; suivant : 015791400-mW single-frequency 660-nm semiconductor laser
Auteurs : RBID : Pascal:00-0207711Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
- Diffraction gratings, Distributed feedback lasers, Laser modes, Optical fiber coupling, Optical waveguides, Quantum well lasers, Reviews, Semiconducting gallium compounds, Semiconducting indium compounds, Semiconductor lasers, Semiconductor waveguides, Single mode fiber coupling, Single mode fibers.
Abstract
Using an angled-grating broad-area structure in GaInP-Alinp material system, we obtain single spatial and longitudinal-mode operation at 660 nm. The grating stabilizes the mode to deliver over 400-mW continuous-wave at room temperature from a 60-μm-wide stripe. This is about ten times higher than conventional distributed-feedback power output levels, and is the highest single-frequency power from a monolithic semiconductor device in this wavelength range. These devices should be useful for single-mode-fiber coupling and in applications where high-wavelength stability is required, such as spectroscopy, interferometry, or metrology.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">400-mW single-frequency 660-nm semiconductor laser</title><author><name sortKey="Pezeshki, B" uniqKey="Pezeshki B">B. Pezeshki</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>SDL Inc</s1><s2>San Jose CA</s2><s3>USA</s3><sZ>1 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Dakota du Sud</region></placeName></affiliation></author><author><name sortKey="Hagberg, M" uniqKey="Hagberg M">M. Hagberg</name></author><author><name sortKey="Zelinski, M" uniqKey="Zelinski M">M. Zelinski</name></author><author><name sortKey="Demars, S D" uniqKey="Demars S">S. D. Demars</name></author><author><name sortKey="Kolev, E" uniqKey="Kolev E">E. Kolev</name></author><author><name sortKey="Lang, R J" uniqKey="Lang R">R. J. Lang</name></author></titleStmt><publicationStmt><idno type="inist">00-0207711</idno><date when="1999">1999</date><idno type="stanalyst">PASCAL 00-0207711 EI</idno><idno type="RBID">Pascal:00-0207711</idno><idno type="wicri:Area/Main/Corpus">013402</idno><idno type="wicri:Area/Main/Repository">015790</idno></publicationStmt><seriesStmt><idno type="ISSN">1041-1135</idno><title level="j" type="abbreviated">IEEE Photonics Technol Lett</title><title level="j" type="main">IEEE Photonics Technology Letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Diffraction gratings</term><term>Distributed feedback lasers</term><term>Laser modes</term><term>Optical fiber coupling</term><term>Optical waveguides</term><term>Quantum well lasers</term><term>Reviews</term><term>Semiconducting gallium compounds</term><term>Semiconducting indium compounds</term><term>Semiconductor lasers</term><term>Semiconductor waveguides</term><term>Single mode fiber coupling</term><term>Single mode fibers</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Article synthèse</term><term>Laser réaction répartie</term><term>Composé semiconducteur gallium</term><term>Composé semiconducteur indium</term><term>Mode laser</term><term>Réseau diffraction</term><term>Laser puits quantique</term><term>Guide onde optique</term><term>Couplage fibre optique</term><term>Fibre monomode</term><term>Laser semiconducteur</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Using an angled-grating broad-area structure in GaInP-Alinp material system, we obtain single spatial and longitudinal-mode operation at 660 nm. The grating stabilizes the mode to deliver over 400-mW continuous-wave at room temperature from a 60-μm-wide stripe. This is about ten times higher than conventional distributed-feedback power output levels, and is the highest single-frequency power from a monolithic semiconductor device in this wavelength range. 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